N channel 60V MOSFET
HS50N06DA
1.
Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
2.
Feature
● RDS(ON)≦22mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability
VDS RDS(on)
ID
60 22 50
V mΩ A
3.
Pin configuration
Order Number HS50N06DA
Packag...