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HS50N06

HOMSEMI
Part Number HS50N06
Manufacturer HOMSEMI
Description N-channel MOSFET
Published Dec 12, 2018
Detailed Description HS50N06 N channel MOSFET 1.Description The HS50N06 is three-terminal silicon device with current conduction capability o...
Datasheet PDF File HS50N06 PDF File

HS50N06
HS50N06


Overview
HS50N06 N channel MOSFET 1.
Description The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.
Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching 2.
Features „ RDS(ON)=19mΩ(typical) „ Ultra low gate charge (typical 30nC) „ Low reverse transfer capacitance „ Fast switching capability „ 100％ avalanche energy specified „ Improved dv/dt capability 3.
Pin configuration Coperight@ Guangz hou Chengq i Semiconductor Co.
,LTD.
All rights reserved.
www.
homsemi.
com 1/5 HS50N06 N channel MOSFET 4.
Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage Gate to source voltage Continuous drain current Drain current pulsed (note1) TJ=25 ºC TJ=100 ºC Single pulsed avalanche energy (note2) Repetitive avalanche energy (note1) Peak diode recovery dv/dt (note3) VDSS VGSS ID ID IDM EAS EAR dv/d...


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