N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4412 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4412/ME4412-G
FEATURES
RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.
5V Super high density cell design for extremely...