DatasheetsPDF.com

ME4410B-G

Part Number	ME4410B-G
Manufacturer	Matsuki
Description	N-Channel 30-V (D-S) MOSFET
Published	Feb 7, 2016
Detailed Description	N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode ...
Datasheet	ME4410B-G PDF File

Overview

N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON) ≦ 18 mΩ@VGS=10V ● RDS(ON) ≦ 30 mΩ@VGS=4.
5V ● Super high density cell desig...

Similar Datasheet

ME4410B N-Channel 30-V (D-S) MOSFET - Matsuki
ME4410B-G N-Channel 30-V (D-S) MOSFET - Matsuki

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)