Part Number
|
SSC8121GN1 |
Manufacturer
|
AFSEMI |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Dec 15, 2018 |
Detailed Description
|
SSC8121GN1
P-Channel Enhancement Mode MOSFET
⚫ Features
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
...
|
Datasheet
|
SSC8121GN1
|
Overview
SSC8121GN1
P-Channel Enhancement Mode MOSFET
⚫ Features
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.
0A
255mR@-1V8
⚫ General Description
This device is produced with high cell density DMOS trench
technology, which is especially used to minimize on-state
resistance.
This device particularly suits low voltage
applications such as portable equipment, power management
and other battery powered circuits, and low in-line power
dissipation are needed in a very small outline surface mount
package.
Excellent thermal and electrical capabilities.
⚫ Package Information
⚫ Applications
➢ Load Switch
➢ Portable Devices ➢ DCDC conversion ⚫ Pin Configuration
Top View
Bottom View
...
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