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SSC8121GN1

Part Number	SSC8121GN1
Manufacturer	AFSEMI
Description	P-Channel Enhancement Mode MOSFET
Published	Dec 15, 2018
Detailed Description	SSC8121GN1 P-Channel Enhancement Mode MOSFET ⚫ Features VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A ...
Datasheet	SSC8121GN1 PDF File

Overview

SSC8121GN1 P-Channel Enhancement Mode MOSFET ⚫ Features VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.
0A 255mR@-1V8 ⚫ General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.
Excellent thermal and electrical capabilities.
⚫ Package Information ⚫ Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC conversion ⚫ Pin Configuration Top View Bottom View ...

Similar Datasheet

SSC8121GN1 P-Channel Enhancement Mode MOSFET - AFSEMI

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