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G4M65DF2

Part Number G4M65DF2
Manufacturer STMicroelectronics
Title Trench gate field-stop IGBT
Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The...
Features  6 µs of short-circuit withstand time  VCE(sat) = 1.6 V (typ.) @ IC = 4 A  Tight parameter distribution  Safer paral...
Published Jan 21, 2019
Datasheet G4M65DF2 PDF File




Features

 6 µs of short-circuit withstand time
 VCE(sat) = 1.6 V (typ.) @ IC = 4 A
 Tight parameter distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode Applications
 Motor control
 UPS
 PFC Descript...






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