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G4M65DF2

STMicroelectronics
Part Number G4M65DF2
Manufacturer STMicroelectronics
Description Trench gate field-stop IGBT
Published Jan 21, 2019
Detailed Description STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Fig...
Datasheet PDF File G4M65DF2 PDF File

G4M65DF2
G4M65DF2

Overview
STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
6 V (typ.
) @ IC = 4 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essent...


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