AO5803E Dual P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.
8V, in the small SC89-6L footprint.
It can be used as load switching, and wide variety of FET applications.
AO5803E and AO5803EL are electrically identical.
-RoHS compliant -AO5803EL is Halogen Free
Features
VDS (V) = -20V ID = -0.
6A (VGS = -4.
5V) RDS(ON) 0.
8Ω (VGS = -4.
5V) RDS(ON) 1.
0Ω (VGS = -2.
5V) RDS(ON) 1.
25Ω (VGS = -1.
8V)
ESD PROTECTED
S1 G1
D2
SC-89-6
D1 G1 G2
D1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Sour...