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AO5803E

Alpha & Omega Semiconductors
Part Number AO5803E
Manufacturer Alpha & Omega Semiconductors
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Published Jan 29, 2019
Detailed Description AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO5803E/L uses advanced trench ...
Datasheet PDF File AO5803E PDF File

AO5803E
AO5803E

Overview
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.
8V, in the small SC89-6L footprint.
It can be used as load switching, and wide variety of FET applications.
AO5803E and AO5803EL are electrically identical.
-RoHS compliant -AO5803EL is Halogen Free Features VDS (V) = -20V ID = -0.
6A (VGS = -4.
5V) RDS(ON) < 0.
8Ω (VGS = -4.
5V) RDS(ON) < 1.
0Ω (VGS = -2.
5V) RDS(ON) < 1.
25Ω (VGS = -1.
8V) ESD PROTECTED S1 G1 D2 SC-89-6 D1 G1 G2 D1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A, F TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG S1 Maximum -20 ±8 -0.
6 -0.
4 -3 0.
4 0.
24 -55 to 150 Thermal Characteristic...


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