~[R30~~LF IRFF432,433
FIELD EFFECT POVVER
TRANSISTOR
2.
25 AMPERES 500, 450 VOLTS
ROS(ON) =2.
0 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and rel...