SE150100 N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.
This device is suitable for using as a load switch or in PWM applications.
 Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Features For a single MOSFET  VDS = 150V  RDS(ON) = 9.
8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Rating 150 ±20 100 3...

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