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SE150100

Sino-IC
Part Number SE150100
Manufacturer Sino-IC
Description N-Channel MOSFET
Published Feb 22, 2019
Detailed Description SE150100 N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excel...
Datasheet PDF File SE150100 PDF File

SE150100
SE150100

Overview
SE150100 N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.
This device is suitable for using as a load switch or in PWM applications.
 Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Features For a single MOSFET  VDS = 150V  RDS(ON) = 9.
8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Rating 150 ±20 100 390 1100 370 -55 to 175 Units V V A mJ W ℃ ShangHai Sino-IC Microelectronic Co.
, Ltd.
1.
SE150100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS IDSS IGSS VGS(th) RDS(ON) gF...


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