SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of application Features For a single MOSFET  VDS = 60V  RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ...

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