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SE6050B

Sino-IC
Part Number SE6050B
Manufacturer Sino-IC
Description N-Channel MOSFET
Published Feb 22, 2019
Detailed Description SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology an...
Datasheet PDF File SE6050B PDF File

SE6050B
SE6050B

Overview
SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of application Features For a single MOSFET  VDS = 60V  RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ...


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