PBSS301PZ
12 V, 5.
7 A
PNP low VCEsat (BISS)
transistor
Rev.
02 — 17 November 2009
Product data sheet
1.
Product profile
1.
1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301NZ.
1.
2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.
3 Applications
DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Po...