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PBSS301NZ

nexperia
Part Number PBSS301NZ
Manufacturer nexperia
Description 5.8A NPN transistor
Published Feb 14, 2019
Detailed Description PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profil...
Datasheet PDF File PBSS301NZ PDF File

PBSS301NZ
PBSS301NZ

Overview
PBSS301NZ 12 V, 5.
8 A NPN low VCEsat (BISS) transistor Rev.
02 — 17 November 2009 Product data sheet 1.
Product profile 1.
1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS301PZ.
1.
2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ DC-to-DC conversion „ MOSFET gate driving „ Motor control „ Charging circuits „ Power switches (e.
g.
motors, fans) 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.
02.
Condition...


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