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YJL2301C

Part Number YJL2301C
Manufacturer Yangzhou Yangjie
Description P-Channel Enhancement Mode Field Effect Transistor
Published Feb 26, 2019
Detailed Description YJL2301C RoHS   COMPLIANT   P-Channel Enhancement Mode Field Effect Transistor Feature ●VDS=-20V,ID=-3.4A RDS(ON)64m...
Datasheet YJL2301C





Overview
YJL2301C RoHS   COMPLIANT   P-Channel Enhancement Mode Field Effect Transistor Feature ●VDS=-20V,ID=-3.
4A RDS(ON)64mΩ@VGS=-4.
5V RDS(ON)89mΩ@VGS=-2.
5V ●Epoxy meets UL 94 V-0 flammability rating ●Moisture Sensitivity Level1 ●High density cell design for low RDS(ON) ●High Speed switching ●Rugged and reliable ●SOT-23 Package Application ●Battery protection ●Load switch ●Power management ■ Maximum Ratings (TA=25℃ unless otherwise noted) Symbol Parameter VDS Drain-source Voltage VGS Gate-source Voltage ID Drain Current PD Total Power Dissipation RthJA Thermal Resistance From Junction To Ambient TJ Operation Junction Temperature TSTG Storage Temperature Value -20 ±10 -3.
4 1 125 -...






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