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YJL2305B

Yangzhou Yangjie
Part Number YJL2305B
Manufacturer Yangzhou Yangjie
Description P-Channel Enhancement Mode Field Effect Transistor
Published Mar 13, 2019
Detailed Description YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at V...
Datasheet PDF File YJL2305B PDF File

YJL2305B
YJL2305B

Overview
YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.
5V) ● RDS(ON)( at VGS=-2.
5V) ● RDS(ON)( at VGS=-1.
8V) -20V -5.
4A ＜42 mohm ＜55 mohm ＜75 mohm General Description ● Trench Power LV MOSFET technology ● High Density Cell Design for Low RDS(ON) ● High Speed switching Applications ● Battery protection ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ Steady State TA=70℃ Steady State Total Power Dissipation @ TA=25℃ Steady State Thermal Resistance Junction-t...


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