PBSS3515MB
15 V, 0.
5 A
PNP low VCEsat (BISS)
transistor
Rev.
1 — 6 March 2012
Product data sheet
1.
Product profile
1.
1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2515MB.
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2 Features and benefits
Leadless ultra small SMD plastic package
Low package height of 0.
37 mm Low collector-emitter saturation
voltage VCEsat High collector current capability IC and
ICM
1.
3 Applications
DC-to-DC conversion Supply line switching Battery charger
High efficiency due to less heat generation
AEC-Q101 qualified Reduced Printed-Circuit Board (PCB)...