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PBSS3515E

NXP
Part Number PBSS3515E
Manufacturer NXP
Description PNP low VCEsat (BISS) transistor
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet ...
Datasheet PDF File PBSS3515E PDF File

PBSS3515E
PBSS3515E

Overview
www.
DataSheet4U.
com PBSS3515E 15 V, 0.
5 A PNP low VCEsat (BISS) transistor Rev.
01 — 18 April 2005 Product data sheet 1.
Product profile 1.
1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.
NPN complement: PBSS2515E.
1.
2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switch...


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