PBSS5260PAPS
60 V, 2 A
PNP/
PNP low VCEsat (BISS) double
transistor
15 December 2015
Product data sheet
1.
General description
PNP/
PNP low VCEsat Breakthrough In Small Signal (BISS) double
transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/
NPN complement: PBSS4260PANS
2.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity • High energy efficiency due to less ...