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PBSS5260PAP

NXP
Part Number PBSS5260PAP
Manufacturer NXP
Description PNP/PNP low VCEsat (BISS) transistor
Published Nov 11, 2013
Detailed Description PBSS5260PAP 12 December 2012 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. General description...
Datasheet PDF File PBSS5260PAP PDF File

PBSS5260PAP
PBSS5260PAP

Overview
PBSS5260PAP 12 December 2012 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1.
General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP.
NPN/NPN complement: PBSS4260PAN.
2.
Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.
Applications • • • • • Load switch Battery-driven devices ...


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