YJL2305B
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect
Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-4.
5V) ● RDS(ON)( at VGS=-2.
5V) ● RDS(ON)( at VGS=-1.
8V)
-20V
-5.
4A <42 mohm <55 mohm <75 mohm
General Description
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source Voltage
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ Steady State TA=70℃ Steady State
Total Power Dissipation @ TA=25℃ Steady State Thermal Resistance Junction-t...