YJB150N06BQ
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect
Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ● 100% ▽VDS Tested
60V
150A <5.
5mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
● Industrial and Motor Drive applications
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current Pulsed Drain Current A
TC=25℃ TC=100℃
Total Power Dissipation
TC=25℃ TC=100℃
Single Pulse Avalanche Energy
Thermal...