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YJB150N06BQ

Part Number	YJB150N06BQ
Manufacturer	Yangzhou Yangjie
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Mar 13, 2019
Detailed Description	YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( a...
Datasheet	YJB150N06BQ PDF File

Overview

YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 150A ＜5.
5mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Avalanche Energy Thermal...

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YJB150N06BQ N-Channel Enhancement Mode Field Effect Transistor - Yangzhou Yangjie

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