Power GaAs HEMT
MGF4841CL
Micro-X type plastic package
DESCRIPTION
The MGF4841CL power InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
The MGF4841CL is designed for automotive application and AEC-Q101 qualified.
Outline Drawing
FEATURES
High gain and High Pout,sat Glp=8.
5dB, Pout,sat=11.
5dBm (Typ.
) @ f=24.
3GHz
APPLICATION
K band low noise amplifiers
Fig.
1 Fig.
1
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=1.
5V , VGS=0V
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 4,000pcs/reel
RoHS COMPLIANT
MGF4841CL is a RoHS compliant product.
RoHS compliance is i...