Part Number MGF4841CL
Manufacturer Mitsubishi
Title Power GaAs HEMT
Description The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automo...
Features High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ.) @ f=24.3GHz APPLICATION K band low noise amplifiers Fig.1 Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=1.5V , VGS=0V MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERIN...

File Size 351.48KB
Datasheet MGF4841CL PDF File

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