Microwave Low Noise
SiGe HBT
KT1151
Spring 2012
KT1151
Microwave Low Noise
SiGe Heterojunction Bipolar
Transistor
Features
h Operation Voltage: 10 V h Operating Temperature: –55℃ to +85℃ h Low Noise figure and High Gain
NF=1.
0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz
h High Power Gain
Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz
h Cost Effective 3-lead SOT23, 3-lead SOT323, 4-
lead SOT143 package types
Applications
h RF front end h Communication and instrument system h Satellite receiver
h Television antenna h Walkie-talkie and cordless telephone h Remote controller and security apparatus
Product Description
The KT1151 is a SiGe
NPN HBT (Heterojunction bipolar
transistor) designed for ...