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KT1151

Part Number	KT1151
Manufacturer	K-Line
Description	Microwave Low Noise SiGe Heterojunction Bipolar Transistor
Published	Apr 24, 2019
Detailed Description	Microwave Low Noise SiGe HBT KT1151 Spring 2012 KT1151 Microwave Low Noise SiGe Heterojunction Bipolar Transistor Feat...
Datasheet	KT1151 PDF File

Overview

Microwave Low Noise SiGe HBT KT1151 Spring 2012 KT1151 Microwave Low Noise SiGe Heterojunction Bipolar Transistor Features h Operation Voltage: 10 V h Operating Temperature: –55℃ to +85℃ h Low Noise figure and High Gain NF=1.
0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types Applications h RF front end h Communication and instrument system h Satellite receiver h Television antenna h Walkie-talkie and cordless telephone h Remote controller and security apparatus Product Description The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for ...

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