SBC817-16/25/40
NPN General Purpose
Transistors
FEATURES
l High Current l Low Voltage l General Purpose Switching and Amplification
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Value 45 50 5.
0 500
Unit V V V
mAdc
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit
225 mW 1.
8 mW/°C 5...