DatasheetsPDF.com

SBC817-40L

ON Semiconductor

NPN Silicon Transistors

General Purpose Transistors NPN Silicon BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L Features • S...


SBC817-40L

ON Semiconductor


Octopart Stock #: O-918561

Findchips Stock #: 918561-F

Web ViewView SBC817-40L Datasheet

File DownloadDownload SBC817-40L PDF File




Description
General Purpose Transistors NPN Silicon BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L Features • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DATA SHE
More View ET www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT−23 CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 45 V 50 V 5.0 V 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, PD (Note 1) TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. MARKING DIAGRAM 6x M G G 1 6x = Device Code x = A, B, or C M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1997 1 November, 2022 − Rev. 18 Publication Order Number: BC817−16LT1/D BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) Collector −Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) Emitter −Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ON CHARACTERISTICS V(BR)CEO 45 − − V V(BR)CES 50 − − V V(BR)EBO 5.0 − − V ICBO − − 100 nA − − 5.0 mA DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base −Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) SMALL− SIGNAL CHARACTERISTICS BC817−16, SBC817−16 BC817−25, SBC817−25 BC817−40, SBC817−40 hFE − 100 − 250 160 − 400 250 − 600 40 − − VCE(sat) − − 0.7 V VBE(on) − − 1.2 V Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)






Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)