NXP Semiconductors Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF power
transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.
8 to 2000 MHz.
These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
1.
8 to 30 (2,6)
Two--Tone (10 kHz spacing)
25 PEP
30--512 (3,6)
Two--Tone (200 kHz spacing)
25 PEP
512 (4)
Pulse (100 sec, 20% Duty Cycle)
25 Peak
512 (4)
CW
25
1030 (5)
CW
25
Gps (dB)...