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MRFE6VS25NR1

Part Number	MRFE6VS25NR1
Manufacturer	NXP
Description	RF Power LDMOS Transistors
Published	Jun 3, 2019
Detailed Description	NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFE...
Datasheet	MRFE6VS25NR1 PDF File

Overview

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.
8 to 2000 MHz.
These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.
8 to 30 (2,6) Two--Tone (10 kHz spacing) 25 PEP 30--512 (3,6) Two--Tone (200 kHz spacing) 25 PEP 512 (4) Pulse (100 sec, 20% Duty Cycle) 25 Peak 512 (4) CW 25 1030 (5) CW 25 Gps (dB)...

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MRFE6VS25NR1 RF Power LDMOS Transistors - NXP

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