CYStech Electronics Corp.
Silicon
NPN Epitaxial Planar
Transistor
BTC2881E3
BVCEO IC RCESAT(MAX)
Spec.
No.
: C316E3 Issued Date : 2010.
01.
22 Revised Date : 2010.
09.
28 Page No.
: 1/5
200V 1A 0.
86Ω
Description
• High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • RoHS compliant package
Symbol
BTC2881E3
Outline
TO-220
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range
Symbol
VCBO...