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BTC2881E3

CYStech
Part Number BTC2881E3
Manufacturer CYStech
Description Silicon NPN Epitaxial Planar Transistor
Published Jun 12, 2019
Detailed Description CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec. No. : C316E3 I...
Datasheet PDF File BTC2881E3 PDF File

BTC2881E3
BTC2881E3

Overview
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor BTC2881E3 BVCEO IC RCESAT(MAX) Spec.
No.
: C316E3 Issued Date : 2010.
01.
22 Revised Date : 2010.
09.
28 Page No.
: 1/5 200V 1A 0.
86Ω Description • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • RoHS compliant package Symbol BTC2881E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ; Tstg Limits 300 200 6 1 0.
2 2 20 -55~+150 Unit V V V A A W W °C BTC2881E3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C316E3 Issued Date : 2010.
01.
22 Revised Date : 2010.
09.
28 Page No.
: 2/5 Thermal Data Parameter Thermal ...


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