CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTC2881L3
BVCEO
IC
RCESAT(MAX)
Spec.
No.
: C316L3 Issued Date : 2010.
12.
29 Revised Date : 2011.
01.
03 Page No.
: 1/7
200V 1A 0.
86Ω
Features
• High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package
Symbol
BTC2881L3
Outline
SOT-223
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃
Power Dissipation @TC=25℃ Operating Junction and Storage Temperatur...