GTVA126001EC/FC
Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.
4 GHz
Description
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility
transistors (HEMT) for use in the DC - 1.
4 GHz frequecy band.
They feature input matching, high efficiency, and thermallyenhanced packages.
GTVA126001EC Package H-36248-2
GTVA126001FC Package H-37248-2
Gain (dB) Efficiency (%)
Power Sweep: Gain & Efficiency 50 V, IDQ = 100 mA,
300 µs pulse width, 10% duty cycle
25
70
23
60
21
50
19
40
17
15 0
100
200
300
1200 MHz 1300 MHz 1400 MHz
400 500 600
30
g126001efc-gr1
20
700 800
Output Power (W)
Features
• GaN on SiC HEMT technology
• Input matched
• Ty...