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GTVA126001FC

Part Number	GTVA126001FC
Manufacturer	Wolfspeed
Description	Thermally-Enhanced High Power RF GaN HEMT
Published	Jun 28, 2019
Detailed Description	GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GT...
Datasheet	GTVA126001FC PDF File

Overview

GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.
4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.
4 GHz frequecy band.
They feature input matching, high efficiency, and thermallyenhanced packages.
GTVA126001EC Package H-36248-2 GTVA126001FC Package H-37248-2 Gain (dB) Efficiency (%) Power Sweep: Gain & Efficiency 50 V, IDQ = 100 mA, 300 µs pulse width, 10% duty cycle 25 70 23 60 21 50 19 40 17 15 0 100 200 300 1200 MHz 1300 MHz 1400 MHz 400 500 600 30 g126001efc-gr1 20 700 800 Output Power (W) Features • GaN on SiC HEMT technology • Input matched • Ty...

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GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT - Wolfspeed
GTVA126001FC Thermally-Enhanced High Power RF GaN HEMT - Wolfspeed

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