PBSS5230QA
30 V, 2 A
PNP low VCEsat (BISS)
transistor
23 August 2013
Product data sheet
1.
General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4230QA.
2.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High energy efficiency due to less heat generation • Reduced Printed-Circuit Board (PCB) area requirements • Solderable side pads • AEC-Q101 qualified
3.
Applications
• Loadswitch • Battery-...