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PBSS5230T

NXP
Part Number PBSS5230T
Manufacturer NXP
Description PNP Transistor
Published Oct 8, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transisto...
Datasheet PDF File PBSS5230T PDF File

PBSS5230T
PBSS5230T

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETs in specific applications.
APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting.
• Peripheral drivers – Driver in low supply voltage applications (e.
g.
lamps and LEDs) – Inductive load driver (e.
g.
relays, buzzers and motors).
DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.
MARKING TYPE NUMBER PBSS5230T Note 1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE(1) 3K* 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
−30 −2 −3 220 UNIT V A A mΩ 3 3 1 2 2 MAM256 Fig.
1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5230T − DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2003 Dec 18 2 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tamb Tstg Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation junction temperature operating ambient temperature storage temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °...


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