MOSFETs Silicon N-Channel MOS (DTMOS)
TK560P65Y
TK560P65Y
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
43 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.
24 mA)
3.
Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
DPAK
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 650 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
7A
Drain current (DC)
(Tc = 100 )
(Note 1)
ID
4.
4 A
Drain current (pulsed)
...