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TK560P60Y

Toshiba
Part Number TK560P60Y
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jul 8, 2019
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK560P60Y TK560P60Y 1. Applications • Switching Voltage Regulators 2. Features ...
Datasheet PDF File TK560P60Y PDF File

TK560P60Y
TK560P60Y

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK560P60Y TK560P60Y 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
43 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.
24 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 7A Drain current (DC) (Tc = 100 ) (Note 1) ID 4.
4 A Drain current (pulsed) (Tc = 25 ) (Note 1) IDP 28 A Power dissipation (Tc = 25 ) PD 60 W Single-pulse avalanche energy (Note 2) EAS 64 mJ Single-pulse avalanche current IAS 1.
8 A Reverse drain current (DC) (Note 1) IDR 7 Reverse drain current (pulsed) (Note 1) IDRP 28 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
©2016 Toshiba Corporation 1 Start of commercial production 2016-12 2016-12-14 Rev.
3.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25  (initial), L = 34.
8 mH, RG = 25 Ω, IAS = 1.
8 A TK5...


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