PBSS5350TH
50 V, 3 A
PNP low VCEsat (BISS)
transistor
21 June 2017
Product data sheet
1.
General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits
• Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat genereation • High temperature applications up to 175 °C • AEC-Q101 qualified
3.
Applications
• Power management • DC-to-DC conversion • Supply line switches • Battery charger switches • Peripheral drivers • Driver in low supply voltage app...