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PBSS5350D

nexperia
Part Number PBSS5350D
Manufacturer nexperia
Description PNP transistor
Published Jul 21, 2019
Detailed Description PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 ...
Datasheet PDF File PBSS5350D PDF File

PBSS5350D
PBSS5350D

Overview
PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev.
6 — 28 June 2011 Product data sheet 1.
Product profile 1.
1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D 1.
2 Features and benefits  Low collector-emitter saturation voltage VCEsat  High current capability  High efficiency due to less heat generation  AEC-Q101 qualified  Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications  Supply line switching circuits  Battery management applications  DC-to-DC conversion 1.
4 Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Conditions open base IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02 ; Tamb = 25 °C Min Typ Max Unit - - -50 V - - -3 A - - -5 A - 120...


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