Part Number
|
SSM6J511NU |
Manufacturer
|
Toshiba |
Description
|
Silicon P-Channel MOSFET |
Published
|
Jul 27, 2019 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J511NU
1. Applications
• Power Management Switches
2. Features
(1) 1.8 V gate...
|
Datasheet
|
SSM6J511NU
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J511NU
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 13.
5 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.
5 V)
3.
Packaging and Pin Assignment
UDFN6B
SSM6J511NU
1.
2.
5.
6 Drain 3.
Gate 4.
Source
©2016 Toshiba Corporation
1
Start of commercial production
2015-12
2017-04-18 Rev.
3.
0
SSM6J511NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -12 V
Gate-source voltage
VGSS
±10
Drain current (DC)
(Note 1)
ID
-14 A
Drain current (pulsed)
(Note 1), (Note 2)...
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