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SSM6J511NU

Toshiba
Part Number SSM6J511NU
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jul 27, 2019
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J511NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate...
Datasheet PDF File SSM6J511NU PDF File

SSM6J511NU
SSM6J511NU

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J511NU 1.
Applications • Power Management Switches 2.
Features (1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 13.
5 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Pin Assignment UDFN6B SSM6J511NU 1.
2.
5.
6 Drain 3.
Gate 4.
Source ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2017-04-18 Rev.
3.
0 SSM6J511NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage VGSS ±10 Drain current (DC) (Note 1) ID -14 A Drain current (pulsed) (Note 1), (Note 2)...


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