NX138AK
60 V, N-channel Tench MOSFET
10 June 2016
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection
3.
Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
- - 60
VGS gate-source voltage
-20 -
20
ID
drain current
V...