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NX138BK

nexperia
Part Number NX138BK
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description NX138BK 60 V, single N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhan...
Datasheet PDF File NX138BK PDF File

NX138BK
NX138BK


Overview
NX138BK 60 V, single N-channel Trench MOSFET 29 January 2016 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 265 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.
1 3.
5 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia NX1...



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