PMDXB550UNE
30 V, dual N-channel Trench MOSFET
25 March 2015
Product data sheet
1.
General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Low threshold voltage • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM • Exposed drain pad for excellent thermal conduction
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick refe...